David Hobbs
Professor
Electrons, holes, and the hall effect in amorphous silicon
Author
Summary, in English
The double sign anomaly in hydrogenated amorphous silicon, observed by LeComber et.al. [1] in 1977, has remained puzzling ever since. Recently we attacked this problem from two different directions using the equation-of-motion method. Calculations reproduce the double sign anomaly and were rationalised in terms of the behaviour of the spectral function. In a new type of calculation the motion of a ‘wave packet’ was studied in an applied field. Behaviour characteristics of positive and negative effective masses was found in the same ranges of energy for crystalline and a-Si. A perturbation theory is given for reconciling these results.
Department/s
- Lund Observatory - Has been reorganised
Publishing year
1993-12
Language
English
Pages
457-460
Publication/Series
Journal of Non-Crystalline Solids
Volume
164-166
Document type
Journal article
Publisher
Elsevier
Status
Published
ISBN/ISSN/Other
- ISSN: 0022-3093